TLPGE159P 2002-09-25 1 toshiba led lamp ingaa ? p pure green light emission TLPGE159P panel circuit indicator 5mm diameter(t1-3 / 4) ingaa ? p pure green led all plastic mold type. colorless clear lens low drive current,high intensity pure green light emission recommended forward current: i f = 15~20ma(dc) all plastic molded lens,provides an excellent on-off contrast ratio. fast response time,capable of pulse operation. high power luminous intensity without stand-offs applications: suitable for traffic signal,safety equipment,automotive use,etc. maximum ratings (ta = 25c) characteristics symbol rating unit forward current (dc) i f 50 ma reverse voltage v r 4 v power dissipation p d 140 mw operating temperature range t opr 30~85 c storage temperature range t stg 40~120 c unit in mm jedec D eiaj D toshiba weight: 0.31 g
TLPGE159P 2002-09-25 2 electrical and optical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit forward voltage v f if=20ma 2.27 2.8 v reverse current i r v r =4v 50 a luminous intensity i v if=20ma (note) 153 430 mcd peak emission wavelength p i f =20ma 562 nm spectral line half width ? i f =20ma 11 nm dominant wavelength d i f =20ma 558 nm (note): lamps are classified into the following ranks according to their luminous intensity. measurement tolerance for each limit is 15%. p: 180 360mcd, q: 320 640mcd, r: 560 1120mcd precaution please be careful of the followings soldering temperature: 260c max soldering time: 3s max (soldering portion of lead: up to 2mm from the body of the device) if the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
TLPGE159P 2002-09-25 3 1 i v ? t c case temperature t c (c) relative luminous intensity i v 3 0.1 80 1 0.5 0.3 60 40 20 0 ? 20 relative luminous intensity wavelength wavelength (nm) relative luminous intensity 1.0 0 520 0.8 0.6 0.4 0.2 540 560 580 600 620 640 i f = 20ma ta = 2 5 c i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 i f ? v f forward voltage v f (v) forward current i f (ma) 100 1.6 50 30 10 5 3 1.8 2.0 2.2 2.4 2.6 2.8 ta = 2 5 c radiation pattern ta = 25 c 90 0 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 i v ? i f forward current i f (ma) luminous intensity i v (mcd) 1000 1 1 500 300 100 50 30 10 5 3 3 5 10 30 50 100 ta = 2 5 c
TLPGE159P 2002-09-25 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eac restrictions on product use
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